2SK3456-Z,Top sales 2SK3456-Z,2SK3456-Z DATASHEET -ICSTOCK

Characteristic
IO Rectangular Waveform

12CTQ
12

UnIts
A

wry low rat
additionl

o of reverse (eakage current to junction tamparature. tn
rnprovements In reliability and performanca,it Is a rugge{l

device wIth a guaranteed repelltlve peak voltage capability, and

Slnusoldal Waveform

10.8

axcellant abilitV to wlthstand rewrse energy translents. It can ba used
in both axisting and new designs,

IFSM @ 50 Hz

135

l Tj = 1500C (rep),Tj = 17eoc (non-rep)
. 12A continuous DC output

@60 Hz

140

. 140A surge,60 Hz,one cycle tper junction)

12t @ 50 Hz

125

A2S

. ExWmelv low reverse leakage: e mA ar 1250C
I No voltage drating on VRWM over temperature range

@ 60 Hz

115

. A euarantead repatitiw peak vokage capabillt\/ for short pulses

iz,k-

1250

A\k-

which is 2096 above VRWM

VRWM

30 t0 45

I HigFi power supply raliability

C@-5v

500

. Minimlzes problem of thermal runawaV
I AbIIIW to wlthstand reverse energy transients

-40t0 150

CASE STYLE AND DIMENSIONS

10.540 415)
10 2l04U51

TERh! 4-

1 32 (O.Q52I

L 0

+
TERh13-^HOOEZ
TERM2 - CATHOOE\

10.54 (0.415)
MAX.

IA'594'

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I 6.10 (0 240}
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0 9390.03V

.15 {Dt045J Z 72 co.ion

1

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1 40

mO!

Conforms to JEDEC Outllne T0-220AB

Dimensions In Millimeters and (Inches).

C-23

2SK3456-Z seller

Item		Symbol	Value	Unit
]p·	2SB751		60	V
	2SB751A	-VCBO	80	V
]p·	2SB751		60	V
-y 9E	2SB751A	- VCEO	80	V
iy·		-VEBO	5	V
]p		-ICP	8	A
J11		-Ic	4	A
j(Tc =25C)		Pe	40	W
		Tj	150
		Tstg	- 55+150

2SK3456-Z datasheet

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2SK3456-Z price

80 built-in LCD display drive circuits
1/8 t0 1/128 display duty cycle
Serial or 4-bit parallel data input
Chip disable for low power dissipation for large-sized
panels
Bias supply voltags can be supplied externally
Operating supply voltage and ambient temperature

- 2.7 t0 5.5 V logic supply ( VDD) at Ta = -20 to +850C
- 8 t0 20V LCD supply (VDD - VEE ) at Ta = -20 to
+85 0C
2SK3456-Z pdf

Ratings	Symbol	CM100TJ-12F	Units
Junction Temperature	Tj	-40 t0 150	oc
Storage Temperature	Tstg	-40 t0 125	oc
Collector-Emitter Voltage (G-E SHORT)	VCES	600	Volts
Gate-Emitter Voltage (C-E SHORT)	VGES	+20	Volts
Collector Current (Tc = 250C)	lc	100	Amperes
Peak Collector Current (Tj s 1500C)	ICM	200*	Amperes
Emitter Current (Tc = 250C)"	IE	100	Amperes
Peak Emitter Current"	IEM	200*	Amperes
Maximum Collector Dissipation (Tj < 1500C) (Tc = 250C)	Pe	290	Watts
Mounting Torque, M5 Mounting		31	in-lb
Weight		300	Grams
Isolation Voltage (Main Terminal to Baseplate, AC l min.)	Viso	2500	Volts
Static Electrical Characteristics, Tj = 25 0C unless	otherwise specified
Characteristics Symbol	Test Conditions	Min. Tvp	Max. Units
Collector-Cutoff Current ICES	VCE = VCES, VGE = OV		1 mA
Gate Leakage Current IGES	VGE = VGES, VCE = OV		20 uA
Gate-Emitter Threshold Voltage VG E(th)	lc = 10mA, VCE = 10V	5 6	7 Volts