AD597AH,Top sales AD597AH,AD597AH DATASHEET -ICSTOCK

- In-System Programmable'M (ISP'M) 5-Volt Only
- Increased Manufacturing Yields, Reduced Time-to-
Market, and Improved Product Quality
- Reprogram Soldered Devices for Faster Debugging
* COMBINES EASE OF USE AND THE FAST SYSTEM
SPEED OF PLDs WITH THE DENSITY AND FLEX-
IBILITY OF FIELD PROGRAMMABLE GATE ARRAYS
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AD597AH datasheet

NOTES :
1. In case of 40MHz Frequency, CLl can be supported.
2. Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic
DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations or desk top
computers for the first three years of five year term of this license. Nothing herein limits the rights of Samsung to use Multi-Die Plastic DRAM in other
products or other applications under paragrangh such as mobile, telecom or non-computer application(which include by way of example laptop or
notebook computers, cell phones, televisions or visual monitors)
Violation may subject the customer to legal claims and also excludes any warranty against infringement from Samsung." .
3. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.
Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific
purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
AD597AH price

FEATURES
' International standard package
* Direct copper bonded Al203-ceramic
base plate
* Planar passivated chips
' Isolation voltage 3600 V~
* UL registered, E 72873
AD597AH pdf

	16CPF10 16CPF20 16JPF10 16JPF20	16CPF30 16CPF40 16JPF30 16JPF40	Units	Conditions
j output current	16		A	TC = 1130C
10 Max. average OL		16	A	TC = 1090C
IFSM Max::peak one cycle, non- repetitive surge current,	120		A	50 Hz half cycle sine wave or 6 ms rectangular pulse
per diode	126		A	60 Hz half cycle sine wave or 5 ms rectangular pulse
12t Max. 12t for fusing,	72			t = 10 ms
per diode	66		A2S	t = 8.3 ms
VFM Max. peak forward voltage per diode	0.98	1.25	V	Tj = 25aC IFM = 8A
IRM Max. peak reverse current per diode	25	30	_IlA	Tj = 250C VRM = VRRM
trr Max. reverse recovery time	35	45	ns	Tj = 250C IFM = 8A -di/dt = 50 A/us