Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide
So please handle carefully not to suffer from electrostatic charge.
8. twcs, tRWD, tCWD and tAWD are non restrictive
operating parameters. They are included in the data
sheet as electrical characteristics only. If
twcs)twcs(min) the cycle is an early write cycle
and the data out pin will remain high impedance for
the duration of the cycle.
9. Either tRCH or tRRH must be satisfied for a read
AD7846 price
Absolute Maximum Ratings Thermallnformation
DC Supply Voltage, Vcc . . . . . . . . . . . -0.5V t0 7V Thermal Resistance (Typical, Note l) OJA (oC/W)
DC Input Diode Current, IIK E (PDIP) Package . . . . . . . . 69
DC Output Diode Current, lOK Maximum Junction Temperature . . . . . . . . . . . . . . . . . 1500C
For VO < -0.5V or VO > Vcc + 0.5V . . . . . . . . . . . . . .+20mA Maximum Storage Temperature Range . . . . . . . . . .-650C t0 1500C
DC Drain Current, per Output, 10 Maximum Lead Temperature (Soldering 10s~ 3000C
For -0.5V < VO < Vcc + 0.5V. . . . . . . . . . . . . . . . . . . .+35mA (SOIC _ Lead Tips Only)
DC Output Source or Sink Current per Output Pin, 10
For VO > -0.5V or VO < Vcc + 0.5V . . . . . . . . . . . . . .+25mA
DC Vcc or Ground Current, ICC . . . . . . . . . . . . . . . . . . .+50mA
Operating Conditions
Temperature Range, TA . . . . . . . . . . . . . . . . . -550c t0 1250C
Supply Voltage Range, Vcc
HCT Types . . . . . . . . . . . .4.5V t0 5.5V
DC Input or Output Voltage, VI, VO . . . . . . . . . . . . OV to Vcc
Input Rise and Fall Time
CAUT10N: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. The package impedance is calculated in accordance with JESD 51-7.
DC Electrical Specifications |
| | | |
TEf
CONDI'
|
T
10NS
|
vcc |
250C
|
.400C T0 85aC
|
.55aC T0 1250C
| | |
PARAMETER |
SYMBOL |
vI (V) |
lo (mA) |
(v) |
MIN |
TYP |
MAX |
MIN |
MAX |
MIN |
MAX |
UNITS |
HC TYPES |
High Level Input |
VIH | | |
2 |
1.5 | | |
1 5 | |
1 5 | |
V |
Voltage |
4 5 |
3.15 | | |
3 15 | |
3 15 | |
V |
6 |
4.2 | | |
4 2 | |
4 2 | |
V |
Low Level Input |
VIL | | |
2 | | |
0.5 | |
0.5 | |
0.5 |
V |
Voltage |
4 5 | | |
1.35 | |
1 35 | |
1.35 |
V |
6 | | |
1.8 | |
1.8 | |
1.8 |
V |
High Level Output |
VOH |
VIH or VIL |
-0.02 |
2 |
1.9 | | |
1 9 | |
1 9 | |
V |
Voltage |
-0.02 |
4 5 |
4.4 | | |
4 4 | |
4 4 | |
V |
CMOS Loads
|
-0.02 |
6 |
5.9 | | |
5 9 | |
5 9 | |
V |
High Level Output | | | | | | | | | |
V |
Voltage |
6 |
4 5 |
3.98 | | |
3 84 | |
3 7 | |
V |
TTL Loads
|
-7.8 |
6 |
5 48 | | |
5 34 | |
5 2 | |
V |
Low Level Output |
VOL |
VIH or VIL |
0 02 |
2 | | |
0.1 | |
0.1 | |
0.1 |
V |
Voltage |
0 02 |
4 5 | | |
0.1 | |
0.1 | |
0.1 |
V |
CMOS Loads
|
0 02 |
6 | | |
0.1 | |
0.1 | |
0.1 |
V |
Low Level Output | | | | | | | | | |
V |
Voltage |
6 |
4 5 | | |
0.26 | |
0 33 | |
0.4 |
V |
TTL Loads
|
7.8 |
6 | | |
0.26 | |
0 33 | |
0.4 |
V |
Input Leakage
Current |
lI
|
Vcc or
GND | |
6
| | |
+0.1
| |
+1
| |
±1
|
|
| |
| | | | | | | | | | | | | | |
AD7846 pdf
Notes : 1. Unless otherwise notes, Input level is CMOS(ViHNIL=VDDQNsso) in LVTTL
2. Measured with outputs open.
3. Refresh period is 64ms.
4. K4S643232F-TI"
5. K4S643232F-TP"
