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Parameter |
Symbol |
MIN. |
TYP. |
MAX. |
Unit |
Conditions |
Collector current |
Ic |
0.2 | |
1.2 |
mA |
*2 Ee=0.01 mW/cm2,VCE=5 V |
Dark current |
ICEO | | |
1.0 |
cCA |
Ee=O,VCE=lOV |
Collector-emitter
saturation voltage |
VCE(sat) | | |
1.0 |
V
|
Ee=l mW/cm2,Ic=0.8 mA
|
Collector-emitter
Breakdown voltage |
BVCEO
|
35
| | |
V
|
Ic=0.1 mA, Ee=0
|
Emitter-collector -
Breakdown voltage |
BVECO
|
6
| | |
V
|
IE=O.01 mA, Ee=0
|
Peak sensitivity wavelength |
p | |
860 | |
nm | |
Response time(Rise time)
|
tr
| |
400
|
2 000
|
ccS
|
VCE=2 ViIc=5 mA |
Response time(Fall time) |
tf | |
300 |
1 500 |
ccS |
RL=IOO ] |
Half sensitivity angle |
| |
+15 | | | | | | | | | | |
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Characteristics |
10BQ060 |
Units |
IF(AV) Rectangular
waveform |
1 0
|
A
|
VRRM |
60 |
V |
IFSM @ tp = 5ps sine |
700 |
A |
VF @ 1.OApk, Tj = 1250C |
0 54 |
V |
TJ |
-55 t0 150 |
oc | | | |
BD4827G datasheet
Characteristics |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Units |
Input Capacitance |
Cies | | | |
78 |
nf |
Output Capacitance |
Coes |
VCE = 10V VGE = OV | | |
3.4 |
nf |
Reverse Transfer Capacitance |
Cres | | |
2 |
nf |
Inductive Turn-on Delay Time |
td(on) |
Vcc = 600V, lc = 200A, | | |
300 |
ns |
Load Rise Time |
tr |
VGEl = VGE2 = 15V, | | |
80 |
ns |
Switch Turn-off Delay Time |
td(off) |
RG= 1.6Q, | | |
500 |
ns |
Times Fall Time |
tf |
Inductive Load | | |
300 |
ns |
Diode Reverse Recovery Time" |
trr |
Switching Operation | | |
200 |
ns |
Diode Reverse Recovery Charge" |
Qrr |
IE= 200A | |
12.2 | |
|
Thermal and Mechanical Characteristics, Tj = 25 |
IC unless otherwise specified | | | | |
Characteristics |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Units |
Thermal Resistance, Junction to Case
|
RthO_c)Q Per
|
IGBT l/2 Module, Te Reference
Point per Outline Drawing | | |
O15
|
IC/W
|
Thermal Resistance, Junction to Case
|
Rth(j_c)D Per
|
FWDi l/2 Module, Te Reference
Point per Outline Drawing | | |
0.18
|
IC/w
|
Thermal Resistance, Junction to Case
|
RthO_c)'Q
T |
Per IGBT l/2 Module,
c Reference Point Under Chip | |
O08
| |
IC/W
| | | | | | | |
BD4827G price
Electrodes |
K |
Dyl |
Dy2 |
Dy3 |
Dy4 |
Dy5 |
Dy6 |
Dy7 |
Dy8 |
Dy9 |
D |
Distribution Ratio | | | | | | | | | | | | | | | | | | |
1 | | | | | | | | | | | | | | | | | | | | | | | | |
BD4827G pdf | |
j^I¨| |
|
Surface mount equivalent to JEDEC registered
1N5518 thru lN5546 series |
|
Internal metallurgical bond with the "-1" suffix |
|
Also available in JAN, JANTX, and JANTXV
qualifications per MIL-PRF-19500/437 by adding
the JAN, JANTX, or JANTXV prefixes to part
numbers for desired level of screening; (e.g.
JANTXIN4099UR-1, JANTXVIN4109CUR-1, etc.) |
|
Nonbonded types also available without the "-1"
suffix for both the axial and surface mount
packages |
|
D0-7 0r D0-35 glass body axial-leaded Zener
equivalents also available per JEDEC registration
with part numbers lN5518 thru lN5546 0n
separate data sheets |
|
Operating and Storage temperature: -650C to
+175 C |
|
Thermal Resistance: 100 C/W junction to end cap,
or 2500C/W junction to ambient when mounted on
FR4 PC board (1 0z Cu) with recommended
footprint (see last page) |
|
Steady-State Power: 0.5 watts at end cap
temperature TEC < 1250C or at ambient TA < 50 C
when mounted on FR4 PC board as described for
thermal resistance above (see Figure 2 for
derating) |
|
Forward voltage @200 mA: 1.1 volts |
|
Solder Temperatures: 260 0C for 10 s (max) | | |
|
