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Description:
Powerex IGBTMODTM Modules

are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-

bridge configuration with each tran-
sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the

heat sinking baseplate, offering
simplified system assembly and
thermal management.
BDE3ABA1302A   seller 

Frequency S11 S21 S12 S22 K MSG
(GHz) (Mag) (Ang) (dB) (Mag) (Ang) (dB) (Mag) (Ang) (Mag) (Ang) (dB)
2.0 0.91 -62 16.7 6.86 138 -28.6 0.04 59 0.23 -37 0.38 22.7
4.0 0.83 -108 14.1 5.10 107 -25.1 0.06 41 0.18 . -74 0.53 19.6
6.0 0.80 -132 11.8 3.88 88 -24.0 0.06 33 0.17 -90 0.71 17.9
8.0 0.79 -155 9.6 3.01 71 -23.7 0.07 26 0.19 -120 0.88 16.6
10.0 0.78 -172 7.6 2.39 57 -24.1 0.06 24 0.23 -134 1.15 15.8
12.0 0.80 177 6.2 2.03 45 -23.3 0.07 21 0.27 -147 1.10 14.7
14.0 0.80 166 5.0 1.78 33 -23.2 0.07 17 0.31 -156 1.20 14.1
16.0 0.79 150 4.1 1.61 20 -22.1 0.08 14 0.33 -163 1.20 13.1
18.0 0.80 135 3.5 1.49 5 -21.3 0.09 9 0.32 179 1.18 12.4
20.0 0.81 126 2.3 1.31 -10 -20.4 0.10 2 0.36 153 1.19 11.3
22.0 0.87 117 1.1 1.14 -22 . -19.6 0.11 -4 0.46 138 0.79 10.3
24.0 0.83 112 -0.7 0.93 -28 -18.9 0.11 -4 0.48 136 1.11 9.1
BDE3ABA1302A   datasheet 



Thermal Resistance, Junction-to-Case

RejC

1.7

c/w


Thermal Resistance, Junction-to-Ambient

ROJA

62

c/w


BDE3ABA1302A   price 


Gate-Emitter Voltage (C-E SHORT)
VGES
+20
Volts

Collector Current (Tc = 25IC)
lc
400
Amperes

Peak Collector Current (Tj " 150YC)
ICM
800*
Amperes

Emitter Current" (Tc = 251C)
JE
400
Amperes

Peak Emitter Current"
IEM
800*
Amperes

Maximum Collector Dissipation (Tc = 25IC)
Pe
2800
Watts

Mounting Torque, M6 Main Terminal
1.962.94
N-m

Mounting Torque, M6 Mounting
1.962.94
Nm

Mounting Torque, M4 Terminal
0.981.47
N-m

Weight
400
Grams


Isolation Voltage (Main Terminal to Baseplate, AC l min.)
Vis
2500
Vrms


' Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
"Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).s not exceed Tj(max) rating


Static Electrical Characteristics, Tj = 25 IC unless otherwise specified

Characteristics Symbol
Test Conditions
Min. Typ.
Max. Units


Collector-Cutoff Current ICES
VCE = VCES, VGE = OV
2 0 mA

Gate Leakage Current IGES
VGE = VGES, VCE = OV
0 5cA


Gate-Emitter Th reshold Voltage VG E(th)
lc = 40mA, VCE = 10V
4 5 6 0
7 5 Volts


Collector-Emitter Saturation Voltage VCE(sat)
lc = 400A, VGE = 15V
2 5
3.4"Volts

lc = 400A, VGE = 15V, Tj = 150YC
2.25
Volts


Total Gate Charge QG
Vcc = 600V, lc = 400A, VGE = 15V
2000
nC


Emitter-Collector Voltage VEC
IE = 400A, VGE = OV
3 4 Volts


BDE3ABA1302A   pdf 

frenzel + berg elektronik - Maximilianstr. 28 - 89231 Neu-Ulm - Germany - phone +49(0)731/970 570 - fax +49(0)731/970 5739 -

Page 3 0f 3 Revision l.39
May/19/2003
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