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CSTCG27M0V51-R0  Top sales 

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said
circuitry and specifications.
CSTCG27M0V51-R0   seller 

I DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
1 20 WATTS (typ.) IFF 1030 - 1090 MHz
1 15 WATTS (min.) DME 1025 - 1150 MHz
1 15 WATTS (typ.) TACAN 960 - 1215 MHz
1 10 dB MIN. GAIN
I REFRACTORY GOLD METALLIZATION
I EMITTER BALLASTING AND LOW
THERMAL RESISTANCE
1 20:1 LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
I INPUT MATCHED, COMMON BASE
CONFIGURATION
CSTCG27M0V51-R0   datasheet 

NOTE :
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.OV for periods <30ns.
Maximum DC voltage on input/output pins is Vcc.+0.3V which, during transitions, may overshoot to Vcc+2.OV for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CSTCG27M0V51-R0   price 

CS2 going high and WE going low : A write end at the earliest transition among CSi going high, CS2 going low and WE going high
tWP iS measured from the begining of write to the end of write.
tcw is measured from the CSi going low or CS2 going high to the end of write.
ti\s is measured from the address valid to the beginning of write.
tWR iS measured from the end of write to the address change. tWR<1) applied in case a write ends as CSi or WE going high tWR{2
applied in case a write ends as CS2 going to low.
CSTCG27M0V51-R0   pdf 


Dimensions

Inches

Mimeters

J

O53

13.5

K

O91

23.0

L

1.13

28.7

M

O67

17O

N

O28

7.0

P

M5

M5

Q

0.26 Dia

6.5 Dia

R

O16

4.0


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