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Characteristic

Symbol

Value

Unit

KA5Q0765RT

Drain-Gate Voltage(RGS=1M I )

VDGR

650

V

Gate-Source(GND) Voltage

VGS

+30

V

Drain Current Pulsed(l)

IDM

28

ADC

Continuous Drain Current (Tc = 25IC)

ID

7.0

ADC

Continuous Drain Current (Tc = 100IC)

ID

5.6

ADC

Single Pulsed Avalanch Current(3)(Energy (2

IAS(EAS)

20(570)

A(mj)

Maximum Supply Voltage

VCC,MAX

40

V

VFB

-0.3 to VCC

V

Input Voltage Range


VSync


-0.3 t0 13


V

PD

47

W

Total Power Dissipation


Derating


0.37


W/IC

Operating Junction Temperature.

Tj

+160

][C

Operating Ambient Temperature.


-25 to +85

][C

Storage Temperature Range.

TSTG

-55 to +150

][C

Thermal Resistance

Rthjc

2.7

IC/w


CVXAEEFE221A9   seller 

Cherry Semiconductor Corporation reserves the
right to make changes to the specifications without
notice. Please contact Cherry Semiconductor
Corporation for the latest available information.
CVXAEEFE221A9   datasheet 


T__2c


4


FF -



+


m^


y ^i


CVXAEEFE221A9   price 


TYPICAL PERFORMANCE CU RVES Typical at TA = +250C, nominalinput voltage, and rated output current unless otherwise noted
CVXAEEFE221A9   pdf 


Dim. Inches Millimeter

Minimum Maximum Minimum Maximum Notes


A --- - 1
B .677 .685 17.20 17.40
C --- .770 . 19.56
D 1.200 1.250 30.48 31.75
E .427 .447 10.84 11.35
F .115 .155 2.92 3.94
G --- .515 . 13.08
H --- .249 . 6.32 2
J .200 .300 5.08 7.62
K .120 -- 3.05
M --- .667 . 16.94 Dia.
N .065 .085 1.65 2.15
P .145 .155 3.68 3.93 Dia.
R .055 .065 1.40 1.65 Dia.
S .025 .030 .64 .76


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