CVXAEEFE221A9,Top sales CVXAEEFE221A9,CVXAEEFE221A9 DATASHEET -ICSTOCK

Characteristic	Symbol	Value	Unit
KA5Q0765RT
Drain-Gate Voltage(RGS=1M I )	VDGR	650	V
Gate-Source(GND) Voltage	VGS	+30	V
Drain Current Pulsed(l)	IDM	28	ADC
Continuous Drain Current (Tc = 25IC)	ID	7.0	ADC
Continuous Drain Current (Tc = 100IC)	ID	5.6	ADC
Single Pulsed Avalanch Current(3)(Energy (2	IAS(EAS)	20(570)	A(mj)
Maximum Supply Voltage	VCC,MAX	40	V
	VFB	-0.3 to VCC	V
Input Voltage Range	VSync	-0.3 t0 13	V
	PD	47	W
Total Power Dissipation	Derating	0.37	W/IC
Operating Junction Temperature.	Tj	+160	][C
Operating Ambient Temperature.		-25 to +85	][C
Storage Temperature Range.	TSTG	-55 to +150	][C
Thermal Resistance	Rthjc	2.7	IC/w

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Cherry Semiconductor Corporation reserves the
right to make changes to the specifications without
notice. Please contact Cherry Semiconductor
Corporation for the latest available information.
CVXAEEFE221A9 datasheet

T__2c		4
FF -		+
	m^

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TYPICAL PERFORMANCE CU RVES Typical at TA = +250C, nominalinput voltage, and rated output current unless otherwise noted
CVXAEEFE221A9 pdf

Dim. Inches Millimeter

Minimum Maximum Minimum Maximum Notes

A --- - 1
B .677 .685 17.20 17.40
C --- .770 . 19.56
D 1.200 1.250 30.48 31.75
E .427 .447 10.84 11.35
F .115 .155 2.92 3.94
G --- .515 . 13.08
H --- .249 . 6.32 2
J .200 .300 5.08 7.62
K .120 -- 3.05
M --- .667 . 16.94 Dia.
N .065 .085 1.65 2.15
P .145 .155 3.68 3.93 Dia.
R .055 .065 1.40 1.65 Dia.
S .025 .030 .64 .76