CY23S05-SC,Top sales CY23S05-SC,CY23S05-SC DATASHEET -ICSTOCK

Parameter	Symbol	Condition		Min	Typ	Max	Unit
Recommended Supply Voltage	Vcc			2.7	3.0	5.5	V
Current Consumption	lcc	No signal input			1.0	1.2	mA
Peak Wavelength *1	D				940		nm
B.P.F Center Frequency	fo				37.9		kHz
			0	15
Transmission Distance *1	L	250±501x	±30	12			m
High level Output voltage *1	VOH	30cm over		4.5(2.8)	5.0(3.0)		V
Low level Output voltage *1	VOL	the ray axis			0.1	0.5	V
High level Output Pulse Width *1	TWH	Burst wave=600us		400	600	700	us
Low level Output Pulse Width *1	TWL	Period = 1.2ms		500	600	800	S
Output Form	Active Low Output

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VGE= 15V
	__1	J i=1	25 YC	·	·
			-\|
		r

CY23S05-SC datasheet

ADVANTAGES OF ON-THE-CHIP TRIMMING OF THE
MONOLITHIC AD532

1. True ratiometric trim for improved power supply rejection
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ENVIRONM ENTAL PROPERTIES
TEMPERATURE RATING: -55'C T0 1250C

APPLICATION TOOLING
HAND TOOL 779-2100
use Die 779-2179636
BENCH PRESS (MANUAL) 779-3200
use Platen 779-3130
use Base Plate 779-3179636
BENCH PRESS (PNEUMATIC) 779-3500XT
use Platen 779-3130
use Base Plate 779-3179636
CY23S05-SC pdf

Input Capacitance Cies			80	nF
Output Capacitance Coes	VGE = OV, VCE = 10V -		28	nF
Reverse Transfer Capacitance Cres	VGE = OV, VCE = 10V -		16	nF
Resistive Turn-on Delay Time td(on)			300	ns
Load Rise Time tr	Vcc = 600V, lc = 400A -		500	ns
Switching Turn-off Delay Time td(off)	VGEl = VGE2 = 15V, RG = 0.781 -		350	ns
Times Fall Time tf	VGEl = VGE2 = 15V, RG = 0.781 -		350	ns
Diode Reverse Recovery Time trr	IE = 400A, diE/dt = -800A/ffs		250	ns
Diode Reverse Recovery Charge Qrr	IE = 400A, diE/dt = -800A/ffs	2.97
Thermal and Mechanical Characteristics, Tj	= 25 IC unless otherwise specified
Characteristics Symbol	Test Conditions Min.	Typ.	Max.	Units