CY7C107B,Top sales CY7C107B,CY7C107B DATASHEET -ICSTOCK

T510 capacitor series are suggested over many other
tantalum types due to their higher rated surge, power
dissipation, and ripple current capability. As a caution
many general purpose tantalum capacitors have consid-
erably higher ESR, reduced power dissipation and lower
ripple current capability. These capacitors are also less
reliable as they have lower power dissipation and surge
current ratings. Tantalum capacitors that do not have a
stated ESR or surge current rating are not recommended
for power applications.
CY7C107B seller

NOTES :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than lns, (tr/2-0.5)ns should be added to the parameter
3. Assumed input rise and fall time (tr & tf) = 1ns.
lf tr & tf is longer than lns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1lns should be added to the parameter.
CY7C107B datasheet

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CY7C107B price

Application
Inductive rotational-speed sensors of this
type are suitable for numerous applications
involving the registration of rotational
speeds. Depending on design, they mea-
sure engine speeds and wheel speeds for
ABS systems with absolutely no contact
and no wear, and convert these speeds into
electric signals.
CY7C107B pdf

(V=Valid, X=Don't Care, H=Logic High, L=Logic Low)
NOTES :
1. OP Code : Operand Code
AO ~ A10 & BAO ~ BAl : Program keys. (@MRS)
2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 CLK cycles of MRS.
3. Auto refresh functions are the same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
Partial self refresh can be issued only after setting partial self refresh mode of EMRS.
4. BAO ~ BAl : Bank select addresses.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at the positive going edge of CLK masks the data-in at that same CLK in write operation (Write DQM latency is O), but in read operation,
it makes the data-out Hi-Z state after 2 CLK cycles. (Read DQM latency is 2).