EMVY630SDA471MLN0S,Top sales EMVY630SDA471MLN0S,EMVY630SDA471MLN0S DATASHEET -ICSTOCK

Parameter	Symbol	Min	Nom	Max	Units
Supply (Drain) Voltage	VDl,2	27.5	28.0	28.5	VDC
Quiescent Current (total) (1)	IDO	900	1,000	1,100	mA
Power Output at l dB Compression (single tone)	P-1	120	130		W
Gain at 24W PEP (two tone)	G	13.0	14.0		dB
Gain Variation over frequency at 24W Output (two tone)	AG		0.3	0.5	dB
Input Return Loss (50 Q Ref) at 24W PEP (two tone)	IRL	12.0	14.0		dB
Drain Efficiency at 120W Pout (single tone)	11	43	45		%
Drain Efficiency at 120W PEP (two tone)	11	32	35		%
3rd Order IMD Product (2 tone at 120W PEP;1 MHz spacing)			-30	-28	dBc

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EMVY630SDA471MLN0S datasheet

The following equation determines the required exter-
nal-resistor value to obtain a percentage output voltage
change of A%.
EMVY630SDA471MLN0S price

AiX ) . tSVKH	A2) +	tKHSX !______

EMVY630SDA471MLN0S pdf

The K4S561633F is 268,435,456 bits synchronous high data
rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,
fabricated with SAMSUNG's high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock and l/0 transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst length and programmable latencies allow the same device
to be useful for a variety of high bandwidth, high performance
memory system applications.