1,EP2S130F1020C5ES are hot selling, Following list are globle excellent suppliers of EP2S130F1020C5ES, If you want to purchase EP2S130F1020C5ES, you can contact the suppliers of EP2S130F1020C5ES by email，telephone or leave a message for them.
2,Enter the right button for EP2S130F1020C5ES DATASHEET
Download of EP2S130F1020C5ES, free for datasheet of EP2S130F1020C5ES |
EP2S130F1020C5ES Top sales
SVmb |
Parameter |
Conditions |
Ratings |
U nit |
1 |
Junction temperature | |
-40150 |
IC |
Tstg |
Storage temperature | |
-40125 |
IC |
Vis |
Isolation voltage |
Charged part to case, AC for l minute |
2500 |
V | | | | |
1 471.96 |
N-m |
Mounting torque
|
Mounting screw M5
|
1520 |
kg cm | | |
Weight |
Typical value |
1 25 |
g | | | | | |
EP2S130F1020C5ES seller | | | |
Limits | |
Symbol
|
Parameter
|
Condition
|
Min |
Fyp |
Max. |
Unit
|
ICES |
Collector cutoff current |
VCE = VCES, VGE = OV | | |
1 |
mA |
VGE(th)
|
Gate-emitter
threshold voltage |
lc = 5.OmA, VCE = 10V
|
4 5
|
6
|
7 5
|
V
|
IGES |
Gate-emitter cutoff current |
VGE = VGES, VCE = OV | | |
0.5 |
zA | | |
Collector-to-emitter |
Ti= 25IC | | |
2 2 |
2 8 |
V |
VCE(sat)
|
saturation voltage |
Ti= 150IC |
lc = 50A, VGE = 15V (Note. 4)
| | | |
Cies |
Input capacitance | | | |
5.0 |
nF |
Coes
|
Output capacitance
|
VCE = 10V
| | |
3.8 |
nF |
Cres
|
Reverse transfer capacitance
|
VGE = OV
| | |
1 0 |
nF |
QG |
Total gate charge |
Vcc = 300V, lc = 50A, VGE = 15V | |
150 | |
nC |
VFM |
Forward voltage drop |
IF = 50A, Clamp diode part | | |
1.5 |
V |
RchO-f)Q {Nole 5) | |
IGBT part | | |
1.2 |
IC/W |
RchO-f)R {Nole 5J
|
Thermal resistance
|
Clamp diode part | | |
1.7 |
IlC/W | | | | | | | | |
EP2S130F1020C5ES datasheet ' Pulse width and repetition rate should be such that device junction temperature does not exceed maximum rating " Characteristics of the anti-parallel emitter-collector free-wheel diode.
EP2S130F1020C5ES price | | | |
Limits | |
SYmbO
|
Parameter
|
Test conditions
|
Min |
Typ |
Max |
Unit
|
ICEX |
Collector cutoff current |
VCE=1200V, VEB=2V | | |
8 0 |
mA |
ICB |
Collector cutoff current |
VCB=1200V,Emitter open | | |
8 0 |
mA |
IEB |
Emitter cutoff current |
VEB=7V, Collector open | | |
600 |
mA |
VCE (sat) |
Collector-emitter saturation voltage | | | |
4 0 |
V |
VBE (satl |
Base-emitter saturation voltage |
lc=800A, lB=1 06A
| | |
4 2 |
V |
-VCEO |
Collector-emitter reverse voltage |
lc=-800A (diode forward voltage) | | |
1 8 |
V |
hFE |
DC current gain |
lc=800A, VCE=4.OV |
750 | | | |
ton | | | | |
2 5 | |
ts |
Switching time |
Vcc=600V, lc=800A, IBl=1 6A, -IB2=16A | | |
20 | |
tf | | |
5 0 | |
Rth lj-c)O |
Thermal resistance |
Transistor part | | |
0 023 |
Yc/w |
Rtri lj-clR |
(junction to casel |
Diode part | | |
0 1 2 |
YC/W |
Rth lc-f)
|
Contact thermal resistance
lcase to fin) |
Conductive grease applied
| | |
0 01
|
YC/W
| | | | | | | |
EP2S130F1020C5ES pdf
Dimensions |
Inches |
Mimeters |
A |
2.83 |
72.0 |
B |
2.17+0.01 |
55+0.25 |
c |
3.58 |
91.0 |
D |
2 91±0.01 |
74.0+0.25 |
E |
0.43 |
11.0 |
F |
0.79 |
20.0 |
G |
0.69 |
17.5 |
H |
0.75 |
19.1 |
J |
0.39 |
10.0 |
K |
0.41 |
10.5 |
L |
O05 |
1.25 | | | |
|
