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EPF10K30EFC484-2,Top sales EPF10K30EFC484-2,EPF10K30EFC484-2 DATASHEET |
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| EPF10K30EFC484-2 Top sales M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 EPF10K30EFC484-2 seller
EPF10K30EFC484-2 datasheet 170-761 5.70C/W H=15.9, W=63.5, D=50 170-089 3.90C/W H=1 5.9, W=63.5, D=1 00 170-762 3.OaC/W H=1 5.9, W=63.5, D=1 50 EPF10K30EFC484-2 price NOTES (READ CYCLE) 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHz(Max.) is less than tLz(Min.) both for a given device and from device to device interconnection. EPF10K30EFC484-2 pdf Note l. IE, VEC, trr, Orr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi) 2. Pulse width and repetition rate should be such that the device junction temp. (Ti) does not exceed Tjmax rating. 3. Junction temperature (Ti) should not increase beyond 150YC. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Te measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". *3 : If you use this value, Rth(f-a; should be measured just under the chips. |
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