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SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS


Vso


Diode Stand-off Voltage


IDIODE = +10piA


+5.9


V


ILEAK


Diode Leakage Current


VIN=3.3V


100


nA

VSIG


Small Signal Clamp Voltage
Positive Clamp
Negative Clamp


IDIODE = lOmA
IDIODE = -10rTiA


6.0
-9.2


7.6
-7.6


9.2
-6.0


V
V

VESD



In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2

Notes 2, 3 and 4




+30

+15


kV

kV

VCL



Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Between adjacent bumps
Between diagonal bumps

Notes 2, 3 and 4





19.5
19.9



V
V


RD



Dynamic Resistance

Between adjacent bumps

Between diagonal bumps


Notes 2, 3 and 4




0.85

1.10



Q

Q


c


Capacitance


At OVDC, 1MHz, 30mVAC


27


pF

Note l
Note 2











Note 3
Note 4





TA=250C unless otherwise specified.
ESD applied to input and output pins with respect to
another diode, one at a time.
Unused pins are left open.
These parameters are guaranteed by design and char-
acterization.













~ 2004 California Micro Devices Corp. All rights reserved









Figure l. Parameter Legend








V













06/28/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 . Tel: 408.263.3214 . Fax: 408.263.7846 . www.calmicro.com 3


ERJ8GEYJ1R8V   seller 


Input Pulse Levels

GND t0 3.OV

Input Rise and Fall Time

-125

2 ns

10% t0 90%

Others

3 ns

Input Timing Reference Levels

1.5V

Output Timing Reference Levels

1.5V

Output Load

See Figure 2


ERJ8GEYJ1R8V   datasheet 


KA5Q12656RT

Drain-Gate Voltage(RGS=1M I )

VDGR

650

V

Gate-Source(GND) Voltage

VGS

+30

V

Drain Current Pulsed(l)

IDM

48

ADC

Continuous Drain Current (Tc = 25IC)

ID

12

ADC

Continuous Drain Current (Tc = 100IC)

ID

8.4

ADC

Single Pulsed Avalanch Current(Energy (2

IAS(EAS)

30(950)

A(mj)

Maximum Supply Voltage

VCC,MAX

40

V

VFB

-0.3 to VCC

V

Input Voltage Range


VSync


-0.3 t013


V

PD

55

W

Total Power Dissipation


Derating


0.4


w/YC

Operating Junction Temperature.

Tj

+160

IC

Operating Ambient Temperature.


-25 to +85

IC

Storage Temperature Range.

TSTG

-55 to +150

IC

Thermal Resistance

Rthjc

2.5

IC/W


ERJ8GEYJ1R8V   price 

Note: The remote sense feature is not designed to compensate
for the forward drop of n012-linear or frequency depende12t
components tbat may be placed in series witb the converter
output. Examples include OR-ing diodes, filter inductors,
ferrite beads, and fuses. Wben tbese components are enclosed
by the remote sense connections tbey are effectively placed
inside the regulation control loop, wbicb can adversely affect
the stability of the regulator.
ERJ8GEYJ1R8V   pdf 


Parameter

Value

Unit

Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode


2200
250


V
V

Average Anode Current c8n

1

LLA

Average Pulse Count Rate c-c

6×106

s1

Average Cathode Current@

1

nA


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