EVM1DSX30B22,Top sales EVM1DSX30B22,EVM1DSX30B22 DATASHEET -ICSTOCK

DESCRIPTION

The EMIF03-SIMOIF2 is a highly integrated
devices designed to suppress EMI/RFI noise in all
systems subjected to electromagnetic interfer-
ences. The EMIF03 flip chip packaging means the
package size is equal to the die size.
This filter includes an ESD protection circuitry
which prevents the device from destruction when
subjected to ESD surges up 15kV.

BENEFITS

N EMI symmetrical (l/0) low-pass filter
N High efficiency in EMI filtering
N Lead free package
I Very low PCB space consuming:
1.42mm x l.42mm
N Very thin package: 0.65 mm
I High efficiency in ESD suppression
N High reliability offered by monolithic integration
N High reducing of parasitic elements through
integration & wafer level packaging.

COMPLIES WITH THE FOLLOWING STANDARDS:
IEC61000-4-2
Level 4 15kV (air discharge)
8kV (contact discharge)

MIL STD 883E - Method 3015-6 Class 3
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Note: While the RA0512J has been designed to be
resistant to electro-static discharge, ESD, damage,
it still can be damaged from such discharges. Stan-
dard electronic ESD precautions should be ob
served when handling and storing this device.
EVM1DSX30B22 datasheet

I I
- VCE=2.5V _ Ti=250C				f
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EVM1DSX30B22 price

. Glass Passivated Die Construction

. 1500W Peak Pulse Power Dissipation
. 5.OV - 170V Standoff Voltage
. Uni- and Bi-Directional Versions Available

. Excellent Clamping Capability
. Fast Response Time
. Plastic Case Material has UL Flammability
Classification Rating 94V-O
EVM1DSX30B22 pdf

				Limits
Symbol	ltem	Conditions		Min	Typ	Max	Unit
ICES	Collector cutoff current	VCE = VCES, VGE = OV				32	mA
VGE(th)	Gate-emitter threshold voltage	lc = 180mA, VCE = 10V		4 5	5 5	6.5	V
IGES	Gate-Ieakage current	VGE = VGES, VCE = OV				0 5
	Collector-emitter	Tj= 25IC			2 40		V
VCE(sat)	saturation voltage	Tj= 125IC	lc = 1800A, VGE = 15V (Note 4)		2.95		V
Cies	Input capacitance	VCE = 10V			168		nF
Coes	Output capacitance	VGE = OV			21.0		nF
Cres	Reverse transfer capacitance	VGE = OV			8 4		nF
QG	Total gate charge	Vcc = 850V, lc = 1800A, VGE = 15V			15.4
td (on)	Turn-on delay time	Vcc = 850V, lc = 1800A				1 60	ccS
tr	Turn-on rise time	VGEI = VGE2 = 15V				2.00	0
td (off)	Turn-off delay time	RG = 0.3 1				2 70
tf	Turn-off fall time	Resistive load switching operation				0.80
VEC(Note 21	Emitter-collector voltage	IE = 1800A, VGE = OV			2.50		V
trr (Note 21	Reverse recovery time	IE = 1800A,				2.70
Qrr (Note 21	Reverse recovery charge	die / dt = -5100A /05			700		ccc
RthO-c)Q		Junction to case, IGBT part				0.008	K/W
RthO-c)R	Thermal resistance	Junction to case, FWDi part				0.013	K/W
Rth(c-f)	Contact thermal resistance	Case to fin, conductive grease applied			0.006		K/W