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54Ba11(6x9) FBGA

1

2

3

7

8

9

A

VSS

DQ15

VSSQ

VDDQ

DQO

VDD

B

DQ14

DQ13

VDDQ

VSSQ

DQ2

DQ1

c

DQ12

DQ11

VSSQ

VDDQ

DQ4

DQ3

D

DQ10

DQ9

VDDQ

VSSQ

DQ6

DQ5

E

DQ8

NC

VSS

VDD

LDQM

DQ7

F

UDQM

CLK

CKE

CAS

RAS

WE

G

A12

A11

A9

BAO

BA1

CS

H

A8

A7

A6

AO

A1

A10

J

VSS

A5

A4

A3

A2

VDD


HGL3NT4500   datasheet 



IC


= 50




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/cc= 30C

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HGL3NT4500   price 



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HGL3NT4500   pdf 



Parameter


Symbol

·5

·6


Units


Notes

Min

Max

Min

Max


Random read or write cycle time

tRC

90

110

ns


Read-modify-write cycle time

tRWC

133

155

ns

Access time from RAS

tRAC

50

60

ns

3,4,10

Access time from CAS

tCAC

13

15

ns

3,4,5

Access time from column address

tAA

25

30

ns

3,10


CAS to output in Low-Z

tCLZ

0

O

ns

3


Output buffer turn-off delay

tOFF

0

13

0

15

ns

6


Transition time (rise and fall)

tT

3

50

3

50

ns

2


RAS precharge time

tRP

30

40

ns


RAS pulse width

tRAS

50

10K

60

10K

ns

RAS hold time

tRSH

13

15

ns

~AS hold time

tCSH

50

60

ns


CAS pulse width

tCAS

13

10K

15

10K

ns


RAS to CAS delay time

tRCD

20

37

20

45

ns

4


RAS to column address delay time

tRAD

15

25

15

30

ns

10


CAS to RAS precharge time

tCRP

5

5

ns


Row address set-up time

tASR

0

O

ns

Row address hold time

tRAH

10

10

ns


Column address set-up time

tASC

0

O

ns

Column address hold time

tCAH

10

10

ns

Column address to RAS lead time

tRAL

25

30

ns


Read command set-up time

tRCS

0

O

ns

Read command hold time referenced to ~AS

tRCH

O

0

ns

8

Read command hold time referenced to RAS

tRRH

O

O

ns

8

Write command hold time

tWCH

10

10

ns


Write command pulse width

tWP

10

10

ns

Write command to RAS lead time

tRWL

13

15

ns

Write command to ~AS lead time

tCWL

13

15

ns


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