HIN213EIA-T,Top sales HIN213EIA-T,HIN213EIA-T DATASHEET -ICSTOCK

DESCRIPTION:

The QS34XV245 is a set of 32-bit high speed bus switches controlled by
LVTTL-compatible active low enable signal. When closed, the switches exhibit
nearzero propagation delay without generating additional ground bounce or
switching noise.
The QS34XV245isspecially designed fordirectinterface betweeen 3.3Vand
2.5Vdeviceswithoutanyexternalcomponents. Whenoperatingfrom a 3.3V

supply, thelogic high levelatthe switch outputis clamped t0 2.5Vwhen the switch
input signal exceeds 2.5V. This device can be used for switching 2.5V buses

withoutsignalatten uation. The ON resistance at3.3V Vcc isless than 5Q typical,

providing near ze ro p ro pagation delay th rough the switch.Absence of DC path
from switch I/O pins toVccorground makesQS34XV245 anidealdevice for
hotswappingapplications.
The QS34XV245 is characterized foroperation from -400C to +850C.
HIN213EIA-T seller

The LA4620 is a two-channel high-power audio ampli-
fier for aur.omotive stereo and general-purpose audio
amplification equipment.

The LA4620 has a 6 t0 22 V operating supply voltage
range. Each channel uses a bridge configuraLion to
obtain high outpuc power from low supply voltages.
Typical ourput power is 17 W per channel, '

The LA4620 incorporates a thermal protecrion circuitj

an ourpuL short-circuiL prorect.ion cucuit and a pop sup-
pression circuit. It has low-power, logic-level standby
conLrol and mute control inpuLs.

The LA4620 is available in 23-pin SIPs and operates
from a 15 v supply.
HIN213EIA-T datasheet

				Limits
Symbol	Parameter	Test conditions		Min.	Typ.	Max.	Unit
ICES	Collector cutoff current	VCE = VCES, VGE = ov				1	mA
VGE(th)	Gate-emitter threshold voltage	lc = 15mA, VCE = 10V		5	6	7.5	v
IGES	Gate leakage current	VGE = VGES, VCE = OV				0 5	yA
		Ti= 250C			117	212	V
VCE(sat)	Collector-emitter saturation voltage	Tj= 1250C	lc = 150A, VGE = 15V		1.7		V
Cies	Input capacitance					23	nF
Coes	Output capacitance	VCE = 10V				2.8	nF
Cres	Reverse transfer capacitance	VGE = OV				0.9	nF
ClG	Total gate charge	Vcc = 300V, lc = 150A, VGE = 15V			600		nC
td(on)	Turn-on delay time					120	ns
tr	Turn-on rise time	Vcc = 300V, lc = 150A				100	ns
td(off)	Turn-off delay time	VGEI = VGE2 = 15V				300	ns
tf	Turn-off fall time	RG = 4.2Q, Inductive load switching operation				300	ns
trr (Notel)	Reverse recovery time	IE = 150A				150	ns
Qrr (Notel)	Reverse recovery charge	IE = 150A			2.5		LiC
VEC(Note 11	Emitter-collector voltage	IE = 150A, VGE = OV				2 6	V
Rth(j-c)0	Thermal resistance'l	IGBT part (1/2 module)				0121	oc/w
Rth(j-c)R	Thermal resistance'l	FWDi part (1/2 module)				0.47	oc/w
Rth(c-f)	Contact thermal resistance	Case to fin, Thermal compound Applied'2 (1/2 module)			0.07		oC/w
Rth(j-d)Q	Thermal resistance	Tc measured point is just under the chips				0.16'3	oc/w
RG	External gate resistance			412		42	Q

HIN213EIA-T price

Nominal
Melting
12t A2Sec
2.03
3.48
6.31
10.2
17.5
27.0
30.6
37.3
53.0
92.4
135
156
HIN213EIA-T pdf

Parameter	Symbol	Condition	Min. Typ. Max.	Unit
Pulsed Radiant Power	ep	IFP=2.5A	1.8	W
Peak Emission Wavelength	Ap		870	nm
Spectral Radiation Half Bandwidth		FWHM	3	nm
Forward Voltage	VF	IFP=2.5A	2.7	V
Rise Time	tr		0.5	ns
Beam Spread Angle : Parallel	9 f f	FWHM	6 8 1 0	degree
Vertical	8	IFP=2.5A	27 30 33	degree
Lasing Threshold Current	lth		O5	A
Monitor PD Current	Im	IFP=2.5A	0.25	mA