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JDH2S01TQ  Top sales 


Maximum Collector Dissipation (Tc = 25YC, Tj " 150YC) Pe 400 Watts
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Option

Circuit

Conditions and notes


External clock


OS(




The input has Schmitt characteristics



Ceramic oscillator


C1 - -'

Ceramic oscillato
C2


JDH2S01TQ   datasheet 

Description:
Mitsubishi IGBT Modules
are designed for use in switching
applications. Each module consists
of one IGBT in a single configura-
tion with a reverse-connected su-
per-fast recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, oering simplified sys-
tem assembly and thermal man-
agement.
JDH2S01TQ   price 


Varistor voltage (@ 1 mA) Vy = 8 up t0 12 V

Clamping voltage (@ 1 A, typical) Vc = 19 V

Maximum clamping voltage (@ 1 A) Vc = 24 V

Maximum average power dissipation Pmax = 3 mW

Maximum surge current (8/20 kis) Imax = 1 x 25 A

Maximum energy absorption (2 ms) Emax = 1 x 17 mJ

Capacitance (@ 1 kHz, 1 V, 25 aC, typical) C = 200 pF

Response time < 0.5 ns

Operating temperature -40 ... +85 0C

Storage temperature (mounted parts) -40 ... +125 0C

Termination material Ag/Ni/Sn

(thickness not specified, adjusted to fulfil wettability specification according to
IEC 60068-2-58)
JDH2S01TQ   pdf 

. Vibration: IEC 60068-2-6Test Fe Procedure B4, 10-60Hz
1.5mm displacement, at 98.lm/s2, 30 minutes in each
of three mutually perpendicular axes at l octave per minute
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