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| 1,JDH2S01TQ are hot selling, Following list are globle excellent suppliers of JDH2S01TQ, If you want to purchase JDH2S01TQ, you can contact the suppliers of JDH2S01TQ by email,telephone or leave a message for them. 2,Enter the right button for JDH2S01TQ DATASHEET Download of JDH2S01TQ, free for datasheet of JDH2S01TQ |
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| JDH2S01TQ Top sales Maximum Collector Dissipation (Tc = 25YC, Tj " 150YC) Pe 400 Watts JDH2S01TQ seller
JDH2S01TQ datasheet Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura- tion with a reverse-connected su- per-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, oering simplified sys- tem assembly and thermal man- agement. JDH2S01TQ price Varistor voltage (@ 1 mA) Vy = 8 up t0 12 V Clamping voltage (@ 1 A, typical) Vc = 19 V Maximum clamping voltage (@ 1 A) Vc = 24 V Maximum average power dissipation Pmax = 3 mW Maximum surge current (8/20 kis) Imax = 1 x 25 A Maximum energy absorption (2 ms) Emax = 1 x 17 mJ Capacitance (@ 1 kHz, 1 V, 25 aC, typical) C = 200 pF Response time < 0.5 ns Operating temperature -40 ... +85 0C Storage temperature (mounted parts) -40 ... +125 0C Termination material Ag/Ni/Sn (thickness not specified, adjusted to fulfil wettability specification according to IEC 60068-2-58) JDH2S01TQ pdf . Vibration: IEC 60068-2-6Test Fe Procedure B4, 10-60Hz 1.5mm displacement, at 98.lm/s2, 30 minutes in each of three mutually perpendicular axes at l octave per minute |
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