JM38510/31101SEA,Top sales JM38510/31101SEA,JM38510/31101SEA DATASHEET -ICSTOCK

Construction:
This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic
cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate,
and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and
matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection.
Following conditions must be avoided:
a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene)
d) Frequent on/off switching that causes thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
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Absolute Maximum ratings are threshold limit values that must not be exceeded even for an instant under any

conditions. Moreover, such values for any two items must not be reached simultaneously. Operation above

these absolute maximum ratings may cause degradation or permanent damage to the device. These are stress

ratings only and do not necessarily imply functional operation below these limits.
JM38510/31101SEA datasheet

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JM38510/31101SEA price

Parameter	Symbol	Condition	Min	Typ	Max	Unit	Notes
Output rise time	trh	Measure in linear region : 1.2V ~ 1.8V	1 37		4.37	Volts/ns	3
Output fall time	tfh	Measure in linear region : 1.2V ~ 1.8V	1 30		3.8	Volts/ns	3
Output rise time	trh	Measure in linear region : 1.2V ~ 1.8V	2.8	3.9	5.6	Volts/ns	1 2
Output fall time	tth	Measure in linear region : 1.2V ~ 1.8V	2.0	2.9	5.0	Volts/ns	1 2

JM38510/31101SEA pdf

Features

. One mold mini size package
. Supply-voltage range : 4.5V t0 5.5V
. Shielded against electrical field disturbance
' Enhanced immunity against ambient light disturbances
. Enhanced reception distance
. Continuous data transmission possible (NRZ 1000 bit/s)
. Available for carrier frequencies between 32.7KHz t0 56.9KHz
. TTL and CMOS compatible