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KB5478835  Top sales 










12
Ul
V
2
PCT=48ms

12
U2
V
4.0
4.4
4.8
PCT=48ms

12
U3
V
6.0
6.4
PCT=48ms

12
ton
c(S
100
PCT=48ms

12
tw
ms
1.8
2.0
2.2
PCT=48ms


KB5478835   seller 

Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide
So please handle carefully not to suffer from electrostatic charge.
KB5478835   datasheet 


Junction Temperature
Tj
-40 t0 150
Yc

Storage Temperature
Tstg
-40 t0 125
YC

Collector-Emitter Voltage (G-E SHORT)
VCES
600
Volts

Gate-Emitter Voltage (C-E SHORT)
VGES
+20
Volts

Collector Current (Tc = 25YC)
lc
150
Amperes

Peak Collector Current
ICM
300*
Amperes

Emitter Current" (Tc = 25YC)
IR
150
Amperes

Peak Emitter Current"
IEM
300*
Amperes


KB5478835   price 


Mounting Torque, M6 Mounting
3.54.5
N-m

Weight
310
Grams


Isolation Voltage (Main Terminal to Baseplate, AC l min.) Vis
2500
Vrms


* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(m:
"Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

ax) rating


Static Electrical Characteristics, Tj = 25 IC unless otherwise specified


Chara cteristics Sym bol Test Conditions
Min
Typ. Max. Units


Collector-Cutoff Current ICES VCE = VCES, VGE = OV
1 mA


Gate Leakage Voltage IGES VGE = VGES, VCE = OV
0.5 00A


Gate-Emitter Threshold Voltage VGE(th) lC = 15mA, VCE = 10V
4.5
6 7 5 Volts


KB5478835   pdf 





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