LT1027H/883,Top sales LT1027H/883,LT1027H/883 DATASHEET -ICSTOCK

Characteristics	Symbol	Test Conditions	Min	Typ	Max	Units
Voltage - Blocking State
Peak Forward Leakage	IDRM	Tj = 1250C, VD = VDRM			2 0	mA
Peak Reverse Leakage	lRRM	Tj = 1250C, VR = VRRM			2 0	mA
Current - Conducting State
Peak On-state Voltage	VTM	Te = 250C, ITM = 2.5A			1 8	Volts
DC Holding Current	IH	VD = 12V, RGK = 1Kfl,, Tj = 250C		3 5		mA
Maximum Thermal Resistance
Junction-to-case	RthO_c)				3 0	oc/w
Gate - Parameters
Gate Current to Trigger	IGT	VD = 6V, RL = 60fl, Tj = 25aC	1		200	LLA
Gate Voltage to Trigger	VGT	VD = 6V, RL = 60fl, Tj = 250C			0 8	Volts
Non-triggering Gate Voltage	VGD	VD = 1/2VDRM, RGK = 1kfl, Tj = 1250C	0 1			Volts

LT1027H/883 seller

CHARACTERISTIC	SYMBOL	RATING	UNIT
Repetitive Peak Reverse Voltage	VRRM	40	V
Average Output Rectified Current (Tc = llOoC)	10	16	A
Peak One Cycle Surge Forward Current(Non Repetitive)	IFSM	160 (50Hz)	A
Junction 'remparature	Tj	-40125	OC
Storage Temparature Range	Tstg	- 40150	oC

LT1027H/883 datasheet


	R ri	n\i					ts
IBl=60mA					5	l
-IB2=0.6A						tI l
		j	7
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			-1
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LT1027H/883 price

11.76 (.463)

19.38 (.763)

21.92 (.863)

24.46 (.963)

27.00 (1.063)

11.76 (.463)

19.38 (.763)

21.92 (.863)

24.46 (.963)

27.00 (1.063)
LT1027H/883 pdf

Frequent on/off switching:
In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips
and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally
induced mechanical stress.