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' Pulse width and repetition rate should be such that device junction temperature does not exceed maximum rating
" Characteristics of the anti-parallel emitter-collector free-wheel diode.
LT1612EMS8   seller 

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LT1612EMS8   datasheet 
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LT1612EMS8   price 


Parameter
Symbol
Condition
Min
Typ.
Max
Unit

Drain-Source Breakdown Voltage
BVDSS
VGS = OV, ID = 50ccA
650
V

VDS = Max, Rating, VGS = OV
200

Zero Gate Voltage Drain Current

IDSS

VDS= 0.8*Max., Rating
VGS = OV, TC = 85IC

300




Static Drain-source on Resistance (Note)

RDS(ON)
VGS = 10V, ID = 2.3A
1.8
2.2
l

Input Capacitance
Ciss
780


Output Capacitance


Coss

VGS = OV, VDS = 25V,

f=lMHz

90

pF

Reverse Transfer Capacitance
Crss
40

Turn on Delay Time
td(on)
VDD= 0.5BVDSS, ID= 7.OA
15
40

Rise Time
tr
(MOSFET switching
45
100

Turn Off Delay Time

td(off)

time are essentially
independent of operating

60

130

nS

Fall Time
tf
temperature)
40
90

Total Gate Charge
(Gate-Source+Gate-Drain)

Qg

VGS = 10V, ID = 7.OA,
VDS = 0.5B VDSS (MOSFET

43


55

Gate-Source Charge
Qgs
Switching time are Essentially
4.0
nC


Gate-Drain (Miller) Charge

Qgd
independent of operating
temperature)

7.3


LT1612EMS8   pdf 

NOTES :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than lns, (tr/2-0.5)ns should be added to the parameter
3. Assumed input rise and fall time (tr & tf) = 1ns.
lf tr & tf is longer than lns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1lns should be added to the parameter.
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