PCM2705DBRG4,Top sales PCM2705DBRG4,PCM2705DBRG4 DATASHEET -ICSTOCK

(
s
L
i
O
A
)
.
(
e
s
)
0
A
'
i
O
V
I
1
0
A
N
O
I
_
L
V
H
f
l
_
L
V
S
b

U
I
V

O
_
L
0

-
1
-
1
0
0
PCM2705DBRG4 seller

NO	I IEM	SYMBOL	MIN.	'IYP	MAX.	UNIT
l	CLOCK FREQL-ENCY	f			40	hiIHz
2	CI,OCK CYCI,F,	l/fcl	25			ns
3	CLOCK- LATCH 'flhilE		25			ns
4	H PUI_SE WID'IH	f}	25			ns
b	ENABLE- IXILH TIhiIE	t(ilL--	O			ns
6	DATA SE'IUP'fllVIE		6			ns
7	DILTA HOLD 'IIME	thd	6			ns
8	ADDRESS- ENABLE 'flME	t,ilJ.f	25			ns
9	UYT:H-iYDDRESS 'InVIE		O			ns
10	LA-ICH- ENABLE 'fllVIE	t,i:l	(]			ns
11	0NrIhiIE	t¨			l	ms

PCM2705DBRG4 datasheet

Collector-Emitter Voltage (G-E SHORT) VCES		600		Volts
Gate-Emitter Voltage VGES		+20		Volts
Collector Current lc		200		Amperes
Peak Collector Current ICM		400*		Amperes
Diode Forward Current IF		200		Amperes
Diode Forward Surge Current IFM		400*		Amperes
Power Dissipation Pd		780		Watts
Max. Mounting Torque M5 Terminal Screws		17		in-lb
Max. Mounting Torque M6 Mounting Screws		26		in-lb
Module Weight (Typical)		270		Grams
V Isolation VRMS		2500		Volts
' Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, Tj = 25 IC unless otherwise specified
Cha racteristics Symbol Test Conditions	Min	Typ	Max	Units
Collector-Cutoff Current ICES VCE = VCES,VGE = OV			1.0	mA
Gate Leakage Current IGES VGE = VGES, VCE = OV			0 5
Gate-Emitter Threshold Voltage VGE(th) lC = 20mA, VCE = 10V	4.5	6.0	7.5	Volts
Collector-Emitter Saturation Voltage VCE(sat) lC = 200A, VGE = 15V		2.1	2.8¨	Volts
lc = 200A, VGE = 15V, Ti = 150IC , J		2 15		Volts
Total Gate Charge QG VCC = 300V, lc = 200A, VGS = 15V		600		nC
Diode Forward Voltage VFM IE = 200A, VGS = OV			2.8	Volts
" Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 1C unless otherwise specified
Cha racteristics Symbol Test Conditions	Min.	Typ.	Max.	Units
Input Capacitance Cies			20	nF
Output Capacitance Coes VGE = OV, VCE = 10V, f = MHz			7	nF
Reverse Transfer Capacitance Cres			4	nF
Resistive Turn-on Delay Time td(on)			200	ns
Load Rise Time tr VCC = 300V,lc = 200A,			550	ns
Switching Turn-off Delay Time td(off) VGEl = VGE2 = 15V, RG = 3.1 I			300	ns
Times FaIITime tf			300	ns
Diode Reverse Recovery Time trr IE = 200A, diE/dt = -400A/cs			110	ns
Diode Reverse Recovery Charge Qrr IE = 200A, diE/dt = -400A/os		0 54		c
Thermal and Mechanical Characteristics, Tj = 25 IC unless otherwise specified
Cha racteristics Symbol Test Conditions	Min.	Typ.	Max.	Units

PCM2705DBRG4 price

l	Rth, (K/W)	t(s)
1 2 3	0.013 0.072 0.175	0.0012 0.047 0.394

PCM2705DBRG4 pdf

-vGE - uv -f = 1nlHz
		rJ Jies
	^
		__= ooes 1
		cres