PE3336,Top sales PE3336,PE3336 DATASHEET -ICSTOCK

The PV0402P Photovoltaic Relay is a dual-pole,
normally open solid-state relay plus ring detec-
tor. By integrating these two functions in one
package it can replace two discrete components,
i.e., a relay and an AC-input opto-coupler. The
relay portion of PV0402P utilizes International
Rectifier's HEXFET power MOSFET as the out-
put switch, driven by an integrated circuit
photovoltaic generator of novel construction.The
output switch is controlled by radiation from a
GaAIAs light emitting diode (LED) which is opti-
cally isolated from the photovoltaic generator.
The ring detector portion of PV0402P has two
LEDs in inverse parallel connection as the input
sensing element and a silicon NPN photo-tran-
sistor as the output switch.
PE3336 seller

C
N
Y
1
7
-
1
,
C
N
Y
1
7
-
3
,
C
N
Y
1
7
-
2
,
C
N
Y
1
7
-
4
P
h
o
t
o
t
r
a
n
s
i
s
t
o
r
O
p
t
o
c
o
u
p
l
e
r
s
PE3336 datasheet

Be careful nor
the ou,er crgondLoctcourlxK_A4

-
0

Uouyteer, ng _\ In s ulati\ ') u te,j Coenndeur.t

Fig.e2 conductor B-I

J
o

PE3336 price

Parameter	Symbol	Min	Typ	Max	Unit	Note
Supply voltage	VDD	3.0	3.3	3 6	V
Input high voltage	VIH	2.0	3O	VDDQ+0.3	V	1
Input low voltage	VIL	-0.3	O	O8	V	2
Output high voltage	VOH	2.4			V	IOH= -2mA
Output low voltage	VOL			0.4	V	IOL= 2mA
Input leakage current	\|Ll	-10		10	uA	3

PE3336 pdf

Unique silicon technology developed by International
Rectifier forms the heart of the PVA. The monolithic
BOSFET contains a bidirectional N-channel power
MOSFET output structure. In addition, this power lC
chip has input circuitry for fast turn-off and gate protec-
tion functions. This section of the BOSFET chip utilizes
both bipolar and MOS technology to form NPN transis-
tors. P-channel MOSFETs. resistors. diodes and ca-