PEB2047-16N V2.1,Top sales PEB2047-16N V2.1,PEB2047-16N V2.1 DATASHEET

GENERAL DESCRIPTION
The K9K1208UOA are a 64M(67,108,864)x8bit NAND Flash
Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell
provides the most cost-effective solution for the solid state
mass storage market. A program operation programs the 528-
byte page in typically 200Us and an erase operation can be per-
formed in typically 2ms on a 16K-byte block. Data in the page
can be read out at 60ns cycle time per byte. The l/0 pins serve
as the ports for address and data input/output as well as com-
mand inputs. The on-chip write controller automates all pro-
gram and erase functions including pulse repetition, where
required, and internal verify and margining of data. Even the
write-intensive systems can take advantage of the
K9K1208UOA's extended reliability of 100K program/erase
cycles by providing ECC(Error Correcting Code) with real time
mapping-out algorithm. The K9K1208UOA-YCBO/YIBO is an
optimum solution for large nonvolatile storage applications such
as solid state file storage and other portable applications requir-
ing non-volatility.
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