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OUTPUT CHARACTERISTICS
Limits
Units

Min. Forward Voltage
8 0
VDC

Max. Reverse Current
10
IJADC


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Limits

Symbol

Parameter

Test conditions


Min

Typ

Max
Unit

ICES
Collector cutoff current
VCE = VCES, VGE = OV
1
mA


VGE(th)

Gate-emitter threshold voltage

lc = 2.OmA, VCE = 10V

4 5

6

7.5

v

IGES
Gate-emitter cutoff current
VGE = VGES, VCE = OV
0.5

Tj= 25IC
2.1
2.8

V

VCE(sat)


Collector-emitter satu ration voltage


Tj= 150IC
lc = 20A, VGE = 15V (Note.4)

2.15

Cies
Input capacitance
2.0
nF

Coes

Output capacitance

VCE = 10V

1.5

nF

Cres

Reverse transfer capacitance

VGE = OV

0.4

nF

QG
Total gate charge
Vcc = 300V, lc = 20A, VGE = 15V
60
nC

VFM
Forward voltage drop
IF = 20A, Clamp diode part
2.8
V

RthO-c)Q

Thermal resistance
IGBT part
2.1
IC/W

RthO-c)R
Clamp diode part
3.2
IC/W


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Ratings
Symbol
CR5AS-8
CR5AS-12
Units

Repetitive Peak Off-state Voltage
VDRM
400
600
Volts

Repetitive Peak Reverse Voltage
VRRM
400
600
Volts

Non-repetitive Peak Reverse Voltage
VRSM
500
720
Volts

DC Reverse Voltage
VR(DC)
320
480
Volts

DC Forward Voltage
VD(DC)
320
480
Volts

RMS On-state Current
lT(RMS)
7 8
7 8
Amperes

Average On-state Current (Nominal, See Graphs) Ta = 880C
IT(avg)
5
5
Amperes

Non-repetitive Peak Surge, On-state Current One Cycle (60 Hz)
lTSM
90
90
Amperes

12t for Fusing, t = 8.3 msec
12t
33
33
A2sec

Peak Gate Power Dissipation
PGM
0 5
0 5
Watts

Average Gate Power Dissipation
PG(avg)
0 1
0 1
Watts

Peak Forward Gate Current
lFGM
0 3
0 3
Amperes

Peak Forward Gate Voltage
VFGM
6
6
Volts

Peak Reverse Gate Voltage
VRGM
6
6
Volts

Storage Temperature
Tstg
-40 t0 125
-40 t0 125
oc

Operating Junction Temperature
Tj
-40 t0 125
-40 t0 125
oc

Weight
O26
0 26
Grams


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Lf N-

~

dfnj

J
x/ce= 300V

tr7
VGE=±
Rr:= 13
5v


Ti 2 125C


S-80924ANMP   pdf 


Tj= 25IC

lc
=3(
)A


{ }lc =: 15/



7

--l l
l o
l l
l l

lc= 6A
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