SAB-M3004-BD,Top sales SAB-M3004-BD,SAB-M3004-BD DATASHEET -ICSTOCK

VIN Range: 2.7V t0 5.5V
Dual Charge Pump to Support Backlight and
Flash LEDs
Backlight Charge Pump:
- Regulated Current
- Four Current Sink Inputs
_ AS2Cwire Brightness Control
- Tri-Mode Charge Pump
- Maximum 30mA of Current Per Input
- Low la (50pA) in Light Load Mode
Flash Charge Pump:
- Regulated Output Voltage
- Up t0 250mA of Pulsed Current
Independent Backlight/Flash Control
Low Noise lMHz Constant Frequency
Operation
Automatic Soft-Start
No Inductors
Available in TDFN44-16 Package
SAB-M3004-BD seller

' Pulse width and repetition rate should be such that device junction temperature does not exceed maximum rating
" Characteristics of the anti-parallel emitter-collector free-wheel diode
SAB-M3004-BD datasheet

The PT8R1002 is intended for the use in 2.4GHz ISM fre-

quency band wireless systems, especially, Bluetooth. The trans-
ceiver consists of a fully integrated 2.4 GHz radio transceiver,
frequency-hopping synthesizer, and analog-to-digital and digi-
tal-to-analog converters for the baseband interface. As illus-
trated in Figure l, the radio module requires only an external
antenna, antenna switch and crystal to complete the analog
front end.
SAB-M3004-BD price

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SAB-M3004-BD pdf

				Limits
Symbol	Parameter	Test conditions		Min.	Typ	Max	Unit
ICES	Collector cutoff current	VCE = VCES, VGE = OV				1	mA
VGE(th)	Gate-emitter threshold voltage	lc = 2mA, VCE = 10V		4 5	6	7 5	V
IGES	Gate-emitter cutoff current	VGE = VGES, VCE = OV				0 5	CA
	Collector-emitter	Tj= 25IC			2 1	2 8	V
VCE(sat)	saturation voltage	Tj= 150IC	lc = 20A, VGE = 15V (Note. 4)		2 15		V
Cies	Input capacitance					2 0	nF
Coes	Output capacitance	VCE = 10V				1 5	nF
C res	Reverse transfer capacitance	VGE = OV				0 4	nF
QG	Total gate charge	Vcc = 300V, lc = 20A, VGE = 15V			60		nC
td (on)	Turn-on delay time	Vcc = 300V, lc = 20A				120	ns
tr	Turn-on rise time	VGEI = VGE2 = 15V				300	ns
td (off)	Turn-off delay time	RG = 311				200	ns
tf	Turn-o fall time	Resistive load				300	ns
VEC (Note. 11	Emitter-collector voltage	IE = 20A, VGE = OV				2 8	V
trr (Note 11	Reverse recovery time	IE = 20A, VGE = OV				110	ns
Qrr (Note.	Reverse recovery charge	die / dt = - 40A / c6			0 05		CC
RchO-f)Q {Note 5}	Thermal resistance	IGBT part, Per l/6 module				2 2	IC/W
RihO-f)R (Nole.	Thermal resistance	FWDi part, Per l/6 module				3 1	IC/W