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SBL530CT  Top sales 

Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique
Plastic material has Underwriters Laboratory
Flammability Classification 94V-O.
Surge overload rating - 200 amperes peak
Mounting Position: Any
Mounting Torgue: 5 In. lb. max
U/L recognized file # 142814
SBL530CT   seller 

The CS4398 accepts PCM data at sample rates from
32 kHz t0 216 kHz, DSD audio data, has selectable dig-
ital filters, consumes little power, and delivers excellent
sound quality.
SBL530CT   datasheet 


l

Topr=-30'C






j


1


25'C






80'c















0



50 100

Output Current:l


SBL530CT   price 


CMT05N50

Characteristic

Symbol

Min

Typ

Max

Units

Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 Lt A)

V(BR)DSS

500

V

Drain-Source Leakage Current
(VDS = 500V, VGS = 0 V)

IDSS


25

A

Gate-Source Leakage Current-Forward
(Vgsf = 20 V, Vos = 0 V)

IGSSF

100

nA

Gate-Source Leakage Current-Reverse
(Vgs, = -20 V. VDS = 0 V)

IGSSR

-100

nA

Gate Threshold Voltage
(VDS = VGS, ID = 250 Lt A)

VGS(th)

2 0

4 0

V

Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.7A) (Note 4)

RDScon)

1 5

Q

Forward Transconductance (VDS = 15V, ID = 2.5 A) (Note 4)

gFS

2 8

mhos

Input Capacitance

(VDS = 25 V, Vcs = 0 V,

Ciss

520

730

pF

Output Capacitance


f= 1.0 MHz)

Coss

170

240

pF

Reverse Transfer Capacitance

Crss

11

20

pF

Turn-On Delay Time

td(on)

7.0

10

ns

Rise Time

(VDD = 250 V, ID = 5 A,

tr

9.0

20

ns

Turn-Off Delay Time

Re = 9.1(1, VGS = 10 V) (Note 4)

td(offl

20

40

ns

Fall Time

tf

10

20

ns

Total Gate Charge

(VDS = 400V, lo = 5A

Qg

10

nC

Gate-Source Charge


Vcs = 10 V) (Note 4)

Qgs

2

nC

Gate-Drain Charge

Qgd

3

nC

Internal Drain Inductance
(Measured from the drain lead 0.25" from package to center of die)

LD

4.5

nH

Internal Drain Inductance
(Measured from the source lead 0.25" from package to source bond pad)

Ls

7.5

nH

SOURCE-DRAIN DIODE CHARACTERISTICS

Reverse Recovery Charge

Qrr

1.8

UC

Forward Turn-On Time

IF = 5A, di/dt = 100A/Us , TJ = 250C

t

Reverse Recovery Time

t

415

ns

Diode Forward Voltage

Is = 5A, Vcs = 0 V

Vs0

1 5

v


SBL530CT   pdf 


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