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I rIggerIng

Max. gate voltage to trigger YGT 2.OV Tj = 25aC

Max. nontriggering gate voltage VGD 0.15V Tj = 1250C

Max. gote current to trigger IGT 150mA Tj = 250C

Max.peakgatepower 'OW

Average gate power VG(AV) 2.OW tp = 10 usec.

Mox. peak gate current 3.OA

Max. peak gate voltage (forward) YGM 20V

Max. peak gate voltage (reverse) VGM 10V

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			td	off)

j		102		Id(on,	tr

	VGE = +15V RG = 4.2 I
	Ti2 125YC		101

SC16C654BIB64 datasheet

Power supplies for high-temperature
electronic systems used in Well logging,
Automotive, Aeronautics or Aerospace
applications.
SC16C654BIB64 price

Characteristic	Symbol	Value	Unit
Non-Repetitive Peak Reverse Voltage	VRM	100	V
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage	VRRM VRWM VR	75	V
RMS Reverse Voltage	VR(RMS)	53	V
Forward Continuous Current (Note l)	IFM	500	mA
Average Rectified Output Current (Note l)	l	250	mA
Non-Repetitive Peak Forward Surge Current @ t = 1.OIJs @ t = 1.Os	IFSM	4 0 2 0	A
Power Dissipation (Note l)	Pd	200	mW
Typical Thermal Resistance, Junction to Ambient Air (Note l)	ROJA	625	K/W
Operating and Storage Temperature Range	Tj, TSTG	-65 to +150	oc

SC16C654BIB64 pdf

Notes:
1. The dominant wavelength, A.d, is derived from the CIE chromaticity diagram and represents the color of the device.
2. The radiant intensity, Ie, in watts per steradian, may be found from the equation Ie = lvhlv, where Iy is the luminous intensity in
candelas and rlv is luminous efficacy in lumens/watt.
3. HLMP-D101.
4. HLMP-D105.
5. HLMP-K101/-K105.