SC28C94A1A52,Top sales SC28C94A1A52,SC28C94A1A52 DATASHEET -ICSTOCK

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
SC28C94A1A52 seller

1.900 cC: ._)i.1 56.7k[
1.850 C-i3._)kl 138.Ok[
1.800 C75 )1:1 l.lk\
1.750 Ci 3.)-LI :16.())LI 6.3kl
1.700 C5..)i:l C6.)LI 14.lk!
1.650 r3:,.,})LI 27.2 k[
1.600 <15.ciUI 53.2 k[
1.550 riIi.1 131.Okj

1.500 1.8 k I

1.475 c)j L_1 4.2 kl

1.400 r_1 3 7}.-:.1 15.lkl
1.375 (Z)LI 20.8kl
SC28C94A1A52 datasheet

The result of the determined production is verified by an

extensive testing procedure. Only accepted products are laid

directly into the paper tape in accordance with EIA 481.
SC28C94A1A52 price

Description:
Mitsubishi IGBT Modules are de-

signed for use in switching applica-
tions. Each module consists of six

IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
SC28C94A1A52 pdf

Collector-Cutoff Current ICES	VCE = VCES, VGE = OV			1O	mA
Gate Leakage Current IGES	VGE = VGES, VCE = OV			O5
Gate-Emitter Threshold Voltage VGE(th)	lc = 15mA, VCE = 10V	4 5	6.0	7.5	Volts
Collector-Emitter Saturation Voltage VCE(sat)	lc = 150A, VGE = 15V		2.1	2.8"	Volts
Collector-Emitter Saturation Voltage VCE(sat)	lc = 150A, VGE = 15V, Ti = 150IC ' J		2.15		Volts
Total Gate Charge QG	Vcc = 300V, lc = 150A, VGE = 15V		450		nC
Emitter-Collector Voltage VEC	IE = 150A, VGE = OV			2.8	Volts
" Pulse width and repetition rate should be such that device junction temperatur
Dynamic Electrical Characteristics, Tj = 25 IC	unless otherwise specified
Characteristics Symbol	Test Conditions	Min	Typ	Max.	Units
Input Capacitance Cies				15	nF
Output Capacitance Coes	VGE = OV, VCE = 10V			5 3	nF
Reverse Transfer Capacitance Cres	VGE = OV, VCE = 10V			3	nF
Resistive Turn-on Delay Time td(on)				200	ns
Load Rise Time tr	Vcc = 300V, lc = 150A,			550	ns
Switching Turn-off Delay Time td(off)	VGEl = VGE2 = 15V, RG = 4.21			300	ns
Times FaIITime tf	VGEl = VGE2 = 15V, RG = 4.21			300	ns
Diode Reverse Recovery Time trr	IE = 150A, diE/dt = -300A/ffs			110	ns
Diode Reverse Recovery Charge Qrr	IE = 150A, diE/dt = -300A/as		0.41