TAS5110C1B-PL032,Top sales TAS5110C1B-PL032,TAS5110C1B-PL032 DATASHEET -ICSTOCK

_ Per Unit Base - Rth(j_c) = 0.35IC/W			IGBT)
Rth(j Sina	e Pulq	/w	FWDi)
T				+=f
			o++

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R1.R2 VA.[._v_olr[je stabi[izing resisfors
R3 : Eonfro[s c~rrent flow
ro super capacitor
Rt* : l-shof pulse seftin resisfor
T1 : Power supp[y rrans ormer
![1 : 3 pin regu[afor
IE2 : PST620 '
1[3 : l-chip microcompuYer
TAS5110C1B-PL032 datasheet

Symbol	Test conditions	Min	Typ.	Max	Unit
VBR	IR =1 mA	5.5	7	9	V
IRM	VRM = 3.3 V per line			500	nA
Ruo	I=10 mA	80	1 00	120	Q
Cline	VR = 2.5 V, F = 1 MHz, 30 mV (on filter cells)	50	60	70	pF

TAS5110C1B-PL032 price

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TAS5110C1B-PL032 pdf

Device	Package	Operating Temperature
KA2506-01	28-DIP-600A	-20 0C ~ +80 0C