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The VBB reference voltage output is used if
single-ended input operation is required. In this case
the VBB pin should be connected to CLKO and
bypassed to GND via a 10-nF capacitor.
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To provide optimal flexibility, the memory array of the AT45DB041B is divided into three
levels of granularity comprising of sectors, blocks, and pages. The Memory Architecture
Diagram illustrates the breakdown of each level and details the number of pages per
sector and block. All program operations to the DataFlash occur on a page-by-page
basis; however, the optional erase operations can be performed at the block or page
level.
TDA4320X datasheet

'1 Recommended Circuit Description
1) Transmitter(IRED) drive current
: IFP = 300mAp_p ~ 600mAp_p

2) R-C Decoupling Filter with Lower Cut-off Frequency
: R=100Q , C=47jLF j fc = 1/2 RC = 33.9Hz

3) External pull-up resistor(optional)

: 10kQ over
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Low Temperature Impedance: The impedance of any
capacitor at - 550C at 120Hz, shall not exceed the
values given in the Standard and Extended Ratings
Tables.
TDA4320X pdf

Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S641632H-TC
4. K4S641632H-TL

5. Unless otherwise noted, input swing level is CMOS(VIH NIL=VDDoNsso