URZ1A222MHD,Top sales URZ1A222MHD,URZ1A222MHD DATASHEET -ICSTOCK

In this application, output capacitors must be used. Since the IC handles an
apparent load of 40hm, more distortion results, makin8 it impossible for the IC
to deliver power at THD=1S as in 2-channel use. It is possible for the lC to
deliver power at THD=51 0r ioth.
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Parameter	Symbol	Min	Max	Unit
Supply Voltage	Vcc	0	5.5	V
Operating Case Temperature Range	Tc	-40	85	aC
Storage Case Temperature Range	Tstg	-40	85	oC
Lead Soldering Temperature/Time			250/10	o C/s
Operating Wavelength Range		1.1	1.6	pm
Minimum Fiber Bend Radius		1.0 (25.4)		in(mm)

URZ1A222MHD datasheet

Ti=25C Ti=1250C			7

		7
	J
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Description:
Mitsubishi IGBT Modules are de-

signed for use in switching applica-
tions. Each module consists of four

IGBTs in an H-Bridge configura-
tion, with each transistor having a
reverse-connected super-fast re-
covery free-wheel diode. All com-
ponents and interconnects are iso-
lated from the heat sinking base-
plate, oering simplified system
assembly and thermal manage-
ment.
URZ1A222MHD pdf

These connections are in parallel with those on J3, and are provided for cases in which the user prefers
to separate the data and power connectors, as we would recommend.