UWT0G681MNL1GS,Top sales UWT0G681MNL1GS,UWT0G681MNL1GS DATASHEET -ICSTOCK

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S
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0
N
V
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d
I
A
I
I
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I
V
I
A

H
i
I
N

1
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N
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l
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V
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O
N
UWT0G681MNL1GS seller

Total Gate Charge	QG	Vcc = 600V, lc = 300A, VGE = 15V	1500		nC
Emitter-Collector Voltage	VEC	IE = 300A, VGE = OV		3.4	Volts

UWT0G681MNL1GS datasheet

CONDITIONS:

Curve VCC3VINO: ViO = 3.OV channel voltage = O.OV
Curve VCC3VIN3: ViO = 3.OV channel voltage = 3.OV
Curve VCC5VINO: Vl0 = 5.5V channel voltage = O.OV
Curve VCC5VIN5: Vl0 = 5.5V channel voltage = 5.5V

UWT0G681MNL1GS price

NOTES:
1. DATUMS -L-, -M-, AND -N- ARE DETERMINED
WHERE TOP OF LEAD SHOULDER EXITS
PLASTIC BODY AT MOLD PARTING LINE.
2. DIMENSION Gl, TRUE POSITION TO BE
MEASURED AT DATUM -T-, SEATING PLANE.
3. DIMENSIONS R AND U DO NOT INCLUDE MOLD
FLASH. ALLOWABLE MOLD FLASH IS O.Ol0
(0.25) PER SIDE.
4. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982.
5. CONTROLLING DIMENSION:INCH.
6. THE PACKAGE TOP MAY BE SMALLER THAN
THE PACKAGE BOTTOM BY UP T0 0.012
(0.300). DIMENSIONS R AND U ARE
DETERMINED AT THE OUTERMOST
EXTREMES OF THE PLASTIC BODY
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS,
GATE BURRS AND INTERLEAD FLASH, BUT
INCLUDING ANY MISMATCH BETWEEN THE
TOP AND BOTTOM OF THE PLASTIC BODY.
7. DIMENSION H DOES NOTINCLUDE DAMBAR
PROTRUSION OR INTRUSION. THE DAMBAR
PROTRUSION(S) SHALL NOT CAUSE THE H
DIMENSION TO BE GREATER THAN 0.037
(0.940). THE DAMBAR INTRUSION(S) SHALL
NOT CAUSE THE H DIMENSION TO BE
SMALLER THAN 0.025 [0.635).
UWT0G681MNL1GS pdf

Description:
Powerex IGBTMODTM Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.